1) Ultra low forward voltage 2) High current overload capacity
ROHM : TO-252GE JEITA : -.
Construction Silicon epitaxial planar type.
Taping specifications (Unit : mm)
TO-252
2.3 2.3.
Structure
Cathode
Open Anode.
Absolute maximum ratings (at Tc= 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
600 V
Reverse voltage Average rectified foward current Peak forward surge current Junction temperatu.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Super Fast Recovery Diode
RFNL5BGE6S
Datasheet
Series Standard Fast Recovery
Dimensions (Unit : mm)
Land size figure (Unit : mm)
6.0
3.0 2.0 6.0
Application General rectification
1.6 1.6
Features 1) Ultra low forward voltage 2) High current overload capacity
ROHM : TO-252GE JEITA : -
Construction Silicon epitaxial planar type
Taping specifications (Unit : mm)
TO-252
2.3 2.3
Structure
Cathode
Open Anode
Absolute maximum ratings (at Tc= 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.
RFNL5BGE6S Datasheet
