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RFUH10TF6SFH - Schottky Barrier Diode

Features

  • 1)Ultra low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type zDimensions(Unit : mm) RFUH10 TF6 S ձ ղ ᖺ᭶ ROHM : TO220NFM ձ Manufacture Year ղ Manufacture Week Data Sheet AEC-Q101 Qualified zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Symbol VRM VR Io Forward current surge peak IFSM Junction temperature Tj Storage temperature Tstg.

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Datasheet Details

Part number RFUH10TF6SFH
Manufacturer ROHM
File Size 907.60 KB
Description Schottky Barrier Diode
Datasheet download datasheet RFUH10TF6SFH Datasheet

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Full PDF Text Transcription

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Super Fast Recovery Diode RFUH10TF6SFH zSerise Super Fast Recovery zApplications General rectification zFeatures 1)Ultra low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type zDimensions(Unit : mm) RFUH10 TF6 S ձ ղ ᖺ᭶ ROHM : TO220NFM ձ Manufacture Year ղ Manufacture Week Data Sheet AEC-Q101 Qualified zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Symbol VRM VR Io Forward current surge peak IFSM Junction temperature Tj Storage temperature Tstg Conditions Duty0.
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