RGTH80TS65GC13 Description
Tstg -55 to +175 °C .rohm. 1/9 2020.09 - Rev.D RGTH80TS65GC13 lThermal Resistance Parameter IGBT Junction - Case Datasheet Symbol Rθ(j-c) Values Unit Min. - - 0.64 °C/W lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min.
RGTH80TS65GC13 Key Features
- Emitter Saturation Voltage
- free Lead Plating ; RoHS pliant