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RGTV60TK65D - Field Stop Trench IGBT

Datasheet Summary

Features

  • ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss 3) Short Circuit Withstand Time 2μs 4) Built in Very Fast & Soft Recovery FRD 4) Pb - free Lead Plating ; RoHS Compliant.
  • Outline TO-3PFM.
  • Inner Circuit (2) (1)(2)(3).
  • 1 (1) (3) (1) Gate (2) Collector (3) Emitter.
  • 1 Built in FRD.

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Datasheet preview – RGTV60TK65D

Datasheet Details

Part number RGTV60TK65D
Manufacturer ROHM
File Size 1.75 MB
Description Field Stop Trench IGBT
Datasheet download datasheet RGTV60TK65D Datasheet
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RGTV60TK65D 650V 30A Field Stop Trench IGBT Datasheet VCES IC (100℃) VCE(sat) (Typ.) PD 650V 20A 1.
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