RGTV80TS65D Description
1/11 2019.12 - Rev.A RGTV80TS65D lThermal Resistance Parameter IGBT Junction - Case Diode Junction - Case Datasheet Symbol Rθ(j-c) Rθ(j-c) Values Min. - - 0.64 - - 0.93 Unit C/W C/W lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - Max.
RGTV80TS65D Key Features
- Emitter Saturation Voltage
- free Lead Plating ; RoHS pliant
- 1 Built in FRD
- Welding IH