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RGTVX6TS65D - Field Stop Trench IGBT

Features

  • lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) High Speed Switching & Low Switching Loss 3) Short Circuit Withstand Time 2μs 4) Built in Very Fast & Soft Recovery FRD (1).
  • 1 5) Pb - free Lead Plating ; RoHS Compliant (3) (1) Gate (2) Collector (3) Emitter.
  • 1 Built in FRD l.

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Datasheet Details

Part number RGTVX6TS65D
Manufacturer ROHM
File Size 1.17 MB
Description Field Stop Trench IGBT
Datasheet download datasheet RGTVX6TS65D Datasheet
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RGTVX6TS65D 650V 80A Field Stop Trench IGBT Datasheet VCES IC (100°C) VCE(sat) (Typ.) PD 650V 80A 1.
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