RGW00TK65DGVC11 Description
Tj -40 to +175 °C Tstg -55 to +175 °C .rohm. 1/11 2022.04 - Rev.B RGW00TK65DGVC11 lThermal Resistance Parameter IGBT Junction - Case Diode Junction - Case Datasheet Symbol Rθ(j-c) Rθ(j-c) Values Unit Min. - - 1.67 °C/W - - 2.29 °C/W lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min.
RGW00TK65DGVC11 Key Features
- Emitter Saturation Voltage
- free Lead Plating ; RoHS pliant
- 1 Built in FRD