RGW80TS65CHR Description
1/13 2021.12 - Rev.B RGW80TS65CHR lThermal Resistance Parameter IGBT Junction - Case Diode Junction - Case Datasheet Symbol Rθ(j-c) Rθ(j-c) Values Unit Min. - - 0.70 C/W - - 1.34 C/W lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. 2/13 2021.12 - Rev.B RGW80TS65CHR Datasheet lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min.
RGW80TS65CHR Key Features
- Emitter Saturation Voltage
- free Lead Plating ; RoHS pliant
- 1 Built in SiC-SBD