RJ1G12BGN
Nch 40V 120A Power MOSFET
Datasheet l Outline
VDSS
40V
TO-263AB
RDS(on)(Max.)
1.86mΩ
±120A
LPT(L)
178W
l Features
1) Low on
- resistance 2) High power small mold package (LPTL) 3) Pb-free lead plating ; Ro HS pliant 4) Halogen free 5) 100% UIS tested l Inner circuit l Application Switching l Packaging specifications Packing
Type Basic ordering unit (pcs) Taping code
Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain
- Source voltage
VDSS
Continuous drain current
VGS = 10V
ID- 1
Pulsed drain current
IDP- 2
Gate
- Source voltage
VGSS
Avalanche current, single pulse
IAS- 3
Avalanche energy, single pulse
EAS- 3
Power dissipation
PD-...
