RJ1P12BBD
Nch 100V 120A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
100V 5.8mΩ ±120A 178W l Features
1) Low on
- resistance 2) High power small mold package 3) Pb-free lead plating ; Ro HS pliant 4) UIS tested 5) Halogen free l Outline
TO-263AB
LPT(L)
l Inner circuit
Datasheet
l Application Switching l Packaging specifications Packing
Embossed Tape
Reel size (mm)
Type Tape width (mm) Quantity (pcs)
24 1000
Taping code
Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain
- Source voltage
Continuous drain current
VGS = 10V
Pulsed drain current
Gate
- Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS ID- 1 IDP- 2 VGSS IAS- 3 EAS- 3 PD- 1 Tj Tstg
100 ±120 ±240 ±20 40 125 178 150 -55 to +150
V A A V A m J W
℃...
