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Data Sheet
0.2Max.
4V Drive Nch MOSFET
RSF015N06
Structure Silicon N-channel MOSFET
Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (TUMT3). 3) Low voltage drive. (4V)
Application Switching
Dimensions (Unit : mm)
TUMT3
Abbreviated symbol : PX
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RSF015N06
Taping TL
3000 ○
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
60
VGSS *1
20
ID *1
1.5
IDP *1 IS
6.0 0.6
ISP *1
6.0
PD *2
0.