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SCS120KG
SiC Schottky Barrier Diode
VR 1200V IF 20A QC 70nC
Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
Construction Silicon carbide epitaxial planer type
Outline
TO-220AC
Datasheet
(1)
Inner circuit
(2) (3)
(1)
(1) Cathode (2) Cathode (3) Anode
(2) (3)
Packaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Tube 50 -
SCS120KG
Absolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Total power dissipation Junction temperature
VRM 1200
VR 1200
IF 20*1
84*2 IFSM 358*3
IFRM
60*4
PD 130*5
Tj 175
Range
SCS120KG Datasheet
