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GUVA-S12SD - UV-B Sensor

Features

  • Gallium Nitride Based Material.
  • Schottky-type Photodiode.
  • Photovoltaic Mode Operation.
  • Good Visible Blindness.
  • High Responsivity & Low Dark Current.

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Datasheet preview – GUVA-S12SD

Datasheet Details

Part number GUVA-S12SD
Manufacturer ROITHNER
File Size 138.25 KB
Description UV-B Sensor
Datasheet download datasheet GUVA-S12SD Datasheet
Additional preview pages of the GUVA-S12SD datasheet.

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    GUVA-S12SD TECHNICAL DATA UV-B Sensor Features • Gallium Nitride Based Material • Schottky-type Photodiode • Photovoltaic Mode Operation • Good Visible Blindness • High Responsivity & Low Dark Current Applications • UV Index Monitoring • UV-A Lamp Monitoring Absolute Maximum Ratings Item Symbol Forward Current Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature * IF VR Top Tst Tsol * must be completed within 10 seconds Value 1 5 -30 … +85 -40 … +90 260 Unit mA V °C °C °C Characteristics (25°C) Item Dark Current Symbol ID Photo Current IPD Temperature Coefficient Responsivity Spectral Detection Range ITC R λ Test Conditions VR = 0.1 V UVA Lamp, 1 mW/cm² 1 UVI UVA Lamp λ = 300 nm, VR = 0 V 10% of R Min. - 240 Typ. - 113 26 0.08 0.14 - Max.
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