LED18FC-PR Overview
LED18FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
LED18FC-PR Key Features
- Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design
- Peak Wavelength: typ. 1.85 µm
- Optical Ouput Power: typ. 0.9 mW qCW
- Package: TO-18, with PR and without window
- 240 … +50
- Maximum current 220 mA
- Remended current 150-200mA
- Maximum current 1 A (puls lenght 500 ns, repetition rate 2kHz)