ROUM 7N65
7A 650V N-channel Enhancement Mode Power MOSFET
| Part No. | 7N65 |
|---|---|
| Datasheet | 7N65 Download |
| Manufacturer | ROUM |
| Description | 7A 650V N-channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 650V RDS(on) （TYP)= 1.2Ω ID = 7A 2FEATURES
● Fast Switching● ESD Improved Capability
● Low ON Resistance(Rdson≤1.4Ω)
● Low Gate Charge(Typical Data:24nC)
● Low Reverse Transfer Capacitances(Typical:5.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3
APPLICATIONS
● used in various power switching circuit for system miniaturization and higher efficiency.● Power switch circuit of electron ballast and adaptor. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4
ELECTRICAL CHARACTERISTICS
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Value Parameter Symbol 7N65/I7N65/E7N65 /B7N65/D7N65 Maximum Drian-Source
