B25N10
B25N10 is 25A 100V N-channel Enhancement Mode Power MOSFET manufactured by ROUM.
Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the Ro HS standard.
2 Features
- Fast Switching
- Low ON Resistance(Rdson≤36mΩ)
- Low Gate Charge(Typical:61n C)
- Low Reverse Transfer Capacitances(Typical:84p F)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
3 Applications
- Power switching applications
- LED Boost
- UPS power supply
- Load switch
VDSS = 100V RDS(on) （TYP)= 30mΩ
ID = 25A
TO-220C TO-220F TO-262
TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Value
25N10/I25N10/E25N10 /B25N10/D25N10
Maximum Drian-Source DC Voltage
Maximum Gate-Drain Voltage
VGS ±20
Drain Current(continuous)
ID（T=25℃） （T=100℃）
30 21
Drain Current(Pulsed)(Note...
