B4N60
B4N60 is 4A 600V N-channel Enhancement Mode Power MOSFET manufactured by ROUM.
Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the Ro HS standard.
VDSS = 600V RDS(on) （TYP)= 2.1Ω
ID = 4A
2 Features
- Fast Switching
- ESD Improved Capability
- Low ON Resistance(Rdson≤2.5Ω)
- Low Gate Charge(Typical Data:14.5n C)
- Low Reverse Transfer Capacitances(Typical:4p F)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
TO-220C TO-220F TO-262
3 Applications
- used in various power switching circuit for system miniaturization and higher efficiency.
- Power switch circuit of electron ballast and adaptor.
TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Value
4N60/I4N60/E4N60 /B4N60/D4N60
Maximum...
