B630
B630 is 9A 200V N-channel Enhancement Mode Power MOSFET manufactured by ROUM.
Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the Ro HS standard.
VDSS = 200V RDS(on) （TYP)= 0.34Ω
ID = 9A
2 Features
- Fast Switching
- Low ON Resistance(Rdson≤0.4Ω)
- Low Gate Charge(Typical Data:22n C)
- Low Reverse Transfer Capacitances(Typical:22p F)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
3 Applications
- High efficiency switch mode power supplies.
- Electronic lamp ballasts based on half bridge.
- UPS
- Inverter
TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Value
630/I630/E630 /B630/D630
Drian-Source Voltage
Gate-Drain Voltage
±30
Drain Current(continuous)
ID（T=25℃）
（T=100℃）
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche Energy(Note 5)
Avalanche Energy Repetitive(Note 1)
Avalanche Current(Note...
