B7N65 - 7A 650V N-channel Enhancement Mode Power MOSFET

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Key Features

Fast Switching.
ESD Improved Capability.
Low ON Resistance(Rdson≤1.4Ω).
Low Gate Charge(Typical Data:24nC).
Low Reverse Transfer Capacitances(Typical:5.5pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

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B7N65 7a 650v n-channel enhancement mode power mosfet by ROUM - Datasheet Preview

Datasheet Details

Part number	B7N65
Manufacturer	ROUM
File Size	1.28 MB
Description	7A 650V N-channel Enhancement Mode Power MOSFET
Datasheet	B7N65 Datasheet

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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 650V RDS(on) （TYP)= 1.2Ω ID = 7A 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.4Ω) ● Low Gate Charge(Typical Data:24nC) ● Low Reverse Transfer Capacitances(Typical:5.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor.