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B8NE60 - 7.5A 600V N-channel Enhancement Mode Power MOSFET

Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Features

  • Fast Switching.
  • ESD Improved Capability.
  • Low ON Resistance(Rdson≤1.3Ω).
  • Low Gate Charge(Typical Data:24nC).
  • Low Reverse Transfer Capacitances(Typical:5.5pF).
  • 100% Single Pulse Avalanche Energy Test.
  • 100% ΔVDS Test 3.

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Datasheet Details

Part number B8NE60
Manufacturer ROUM
File Size 1.34 MB
Description 7.5A 600V N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet B8NE60 Datasheet

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Full PDF Text Transcription

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8NE60/F8NE60/I8NE60/E8NE60/B8NE60/D8NE60 7.5A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 1.0Ω ID = 7.5A 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.3Ω) ● Low Gate Charge(Typical Data:24nC) ● Low Reverse Transfer Capacitances(Typical:5.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of adaptor and charger.
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