ROUM B8NE60
7.5A 600V N-channel Enhancement Mode Power MOSFET
| Part No. | B8NE60 |
|---|---|
| Datasheet | B8NE60 Download |
| Manufacturer | ROUM |
| Description | 7.5A 600V N-channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 1.0Ω ID = 7.5A 2FEATURES
● Fast Switching● ESD Improved Capability
● Low ON Resistance(Rdson≤1.3Ω)
● Low Gate Charge(Typical Data:24nC)
● Low Reverse Transfer Capacitances(Typical:5.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3
APPLICATIONS
● Used in various power switching circuit for system miniaturization and higher efficiency.● Power switch circuit of adaptor and charger. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4
ELECTRICAL CHARACTERISTICS
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 8NE60/I8NE60/E8NE60 /B8NE60/D8NE60 Maximum Drian-
