ROUM D4N60
4A 600V N-channel Enhancement Mode Power MOSFET
| Part No. | D4N60 |
|---|---|
| Datasheet | D4N60 Download |
| Manufacturer | ROUM |
| Description | 4A 600V N-channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 2.1Ω ID = 4A 2FEATURES
● Fast Switching● ESD Improved Capability
● Low ON Resistance(Rdson≤2.5Ω)
● Low Gate Charge(Typical Data:14.5nC)
● Low Reverse Transfer Capacitances(Typical:4pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test TO-220C TO-220F TO-262 3
APPLICATIONS
● used in various power switching circuit for system miniaturization and higher efficiency.● Power switch circuit of electron ballast and adaptor. TO-263 TO-252B TO-251B 4
ELECTRICAL CHARACTERISTICS
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 4N60/I4N60/E4N60 /B4N60/D4N60 Maximum Drian-Sourc
