D50N06 Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
D50N06 Key Features
- Fast Switching
- Low ON Resistance(Rdson≤18mΩ)
- Low Gate Charge(Typical:17nC)
- Low Reverse Transfer Capacitances(Typical:150pF)
- 100% Single Pulse Avalanche Energy Test
- 100% Δ VDS Test