D50N06
D50N06 is 50A 60V N-channel Enhancement Mode Power MOSFET manufactured by ROUM.
Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the Ro HS standard.
2 Features
- Fast Switching
- Low ON Resistance(Rdson≤18mΩ)
- Low Gate Charge(Typical:17n C)
- Low Reverse Transfer Capacitances(Typical:150p F)
- 100% Single Pulse Avalanche Energy Test
- 100% Δ VDS Test
3 Applications
- Power switching applications
- DC-DC Convertors
- UPS power supply
- Load switch
2 D VDSS = 60V RDS(on) （TYP)= 12mΩ
ID = 50A
3S
TO-252
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
PARAMETER
SYMBOL
Maximum Drian-Source DC Voltage Maximum Gate-Drain Voltage
Drain Current(continuous)
Drain Current(Pulsed)(Note 1) Single Pulse Avalanche Energy(Note 5) Avalanche Current(Note 1)
Total Dissipation Junction Temperature
Ta=25℃ TC=25℃ storage Temperature
Maximu5...
