Datasheet4U.com

D50N06 - 50A 60V N-channel Enhancement Mode Power MOSFET

Product Overview

📥 Download Datasheet

D50N06 50A 60V N-channel Enhancement Mode Power MOSFET by ROUM - Datasheet Preview — Datasheet preview – D50N06

Datasheet Details

Part number	D50N06
Manufacturer	ROUM
File Size	743.55 KB
Description	50A 60V N-channel Enhancement Mode Power MOSFET
Datasheet	D50N06 Datasheet
Additional preview pages of the D50N06 datasheet.

Product details

Description

These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

Features

Fast Switching.
Low ON Resistance(Rdson≤18mΩ).
Low Gate Charge(Typical:17nC).
Low Reverse Transfer Capacitances(Typical:150pF).
100% Single Pulse Avalanche Energy Test.
100% Δ VDS Test G 1 3.

📁 Similar Datasheet

D5001UK - METAL GATE RF SILICON FET (Seme LAB)
D5002UK - METAL GATE RF SILICON FET (Seme LAB)
D5006UK - METAL GATE RF SILICON FET (Seme LAB)
D5007-H2-DIM-MR16 - LED SPOT LIGHT (WINSUN)
D5007UK - METAL GATE RF SILICON FET (Seme LAB)
D5011 - 2SD5011 (Inchange Semiconductor)
D5011UK - METAL GATE RF SILICON FET (Seme LAB)
D5012UK - METAL GATE RF SILICON FET (Seme LAB)

Other Datasheets by ROUM

Published: Jan 16, 2019 |