ROUM D630
9A 200V N-channel Enhancement Mode Power MOSFET
| Part No. | D630 |
|---|---|
| Datasheet | D630 Download |
| Manufacturer | ROUM |
| Description | 9A 200V N-channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 200V RDS(on) （TYP)= 0.34Ω ID = 9A 2FEATURES
● Fast Switching● Low ON Resistance(Rdson≤0.4Ω)
● Low Gate Charge(Typical Data:22nC)
● Low Reverse Transfer Capacitances(Typical:22pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3
APPLICATIONS
● High efficiency switch mode power supplies.● Electronic lamp ballasts based on half bridge.
● UPS
● Inverter TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4
ELECTRICAL CHARACTERISTICS
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 630/I630/E630 /B630/D630 Drian-Source Voltage VDS 200 Gate-Drain Voltage VGS ±30 Drain Current(continuous) ID（T=25℃） 9 （T=100℃） 5.7 Drain Current(Pulsed)(Note 1) IDM 36 Single Pulse Avalanche Energy(Note 5) EAS 160 Avalanche Energy Rep...
