D630 - 9A 200V N-channel Enhancement Mode Power MOSFET

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤0.4Ω).
Low Gate Charge(Typical Data:22nC).
Low Reverse Transfer Capacitances(Typical:22pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

📥 Download Datasheet

D630 9a 200v n-channel enhancement mode power mosfet by ROUM - Datasheet Preview

Datasheet Details

Part number	D630
Manufacturer	ROUM
File Size	1.32 MB
Description	9A 200V N-channel Enhancement Mode Power MOSFET
Datasheet	D630 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
D6322	UPD6322C	NEC
D6326C	UPD6326C	NEC
D633	2SD633	Mospec Semiconductor Corporation
D6345C	UPD6345C	NEC
D635	2SD635	Mospec Semiconductor

Other Datasheets by ROUM

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 200V RDS(on) （TYP)= 0.34Ω ID = 9A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤0.4Ω) ● Low Gate Charge(Typical Data:22nC) ● Low Reverse Transfer Capacitances(Typical:22pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● High efficiency switch mode power supplies. ● Electronic lamp ballasts based on half bridge. ● UPS ● Inverter TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.