ED7509 Datasheet PDF

DESCRIPTION

These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2

FEATURES

● Low On Resistance
● Low Gate Charge
● Fast Switching
● Low Reverse Transfer Capacitances
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3

APPLICATIONS

● AC-DC Switching Power
● Pulse Width Modulation Circuit
● Load Switching
● Inverter VDS = 75V RDS(on) （TYP)= 6.7mΩ ID = 80A TO-220C TO-220F TO-262 TO-263 4

ELECTRICAL CHARACTERISTICS

4.1

ABSOLUTE MAXIMUM RATINGS

(Tc=25℃,unless otherwise noted) Parameter Symbol Value D7509/ID7509/ED7509 Drian-Source Voltage VDS 75 Gate-Source Voltage VGS ±25 Drain Current(continuous)(Note 3) Drain Current(continuous)(T=100℃)(Note 3) ID ID(100℃) 80 65 Drain Current(Pulsed)(Note 4) IDM 320 Avalanche Current(Note 5) IAS 25 Si