F10N60
Description
These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.9Ω)
- Low Gate Charge(Typical Data:32nC)
- Low Reverse Transfer Capacitances(Typical:7.5pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
Applications
- Power Switch Circuit of Adaptor and Charger
