F10N60 Datasheet PDF

DESCRIPTION

These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. G 1 2

FEATURES

● Fast Switching
● Low ON Resistance(Rdson≤0.9Ω)
● Low Gate Charge(Typical Data:32nC)
● Low Reverse Transfer Capacitances(Typical:7.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3

APPLICATIONS

● Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency.
● Power Switch Circuit of Adaptor and Charger. 2 D VDSS = 600V RDS(on)（TYP)= 0.68Ω 3 S ID = 10A TO-220F 4

ELECTRICAL CHARACTERISTICS

4.1 Absolute Maximum Rating (Tc=25℃,unless otherwise noted) Parameter Symbol Maximum Drian-Source DC Voltage Maximum Gate-Drain Voltage VDS VGS Drain Current(continuous) ID（T=25℃） （T=100℃） Drain Curr