F10N60 - 10A 600V N-channel Enhancement Mode Power MOSFET
General Description
These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
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10A 600V N-channel Enhancement Mode Power MOSFET F10N60 1 Description These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which ...
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ed VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. G 1 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤0.9Ω) ● Low Gate Charge(Typical Data:32nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency. ● Power Switch Circuit of Adaptor and Charger. 2 D VDSS = 600V RDS(on)（TYP)= 0.68Ω 3 S ID = 10A TO-220F 4 Electr
F10N60 Datasheet
