F10N60 Datasheet PDF - ROUM 10A 600V N-channel Enhancement Mode Power MOSFET Specs

F10N60 - 10A 600V N-channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Features

Fast Switching.
Low ON Resistance(Rdson≤0.9Ω).
Low Gate Charge(Typical Data:32nC).
Low Reverse Transfer Capacitances(Typical:7.5pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

Datasheet Details

Part number	F10N60
Manufacturer	ROUM
File Size	897.66 KB
Description	10A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	F10N60 Datasheet
Additional preview pages of the F10N60 datasheet.

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Full PDF Text Transcription

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10A 600V N-channel Enhancement Mode Power MOSFET F10N60 1 Description These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. G 1 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤0.9Ω) ● Low Gate Charge(Typical Data:32nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency. ● Power Switch Circuit of Adaptor and Charger. 2 D VDSS = 600V RDS(on)（TYP)= 0.68Ω 3 S ID = 10A TO-220F 4 Electrical Characteristics 4.

Published: Jan 17, 2019 |