F20N60 Description
These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 0.36Ω ID = 20A.
F20N60 Key Features
- Fast Switching
- Low On Resistance(Rdson≤0.45Ω)
- Low Gate Charge(Typical:61nC)
- Low Reverse Transfer Capacitances(Typical:20pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
- Used in various power switching circuit for system miniaturization and higher efficiency
- Power switch circuit of adaptor and charger