ROUM F20N60
The package form is TO-220F.| Part No. | F20N60 |
|---|---|
| Datasheet | F20N60 Download |
| Manufacturer | ROUM |
| Description | 20A 600V N-channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 0.36Ω ID = 20A 2FEATURES
● Fast Switching● Low On Resistance(Rdson≤0.45Ω)
● Low Gate Charge(Typical:61nC)
● Low Reverse Transfer Capacitances(Typical:20pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3 Application
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger. TO-220C TO-220F TO-3PN 4
ELECTRICAL CHARACTERISTICS
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) PARAMETER Maximum Drian-Source DC Voltage Maximum Gate-Drain Voltage Drain Current(continuous) Drain Current(Pulsed)
