F630 Overview
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 200V RDS(on) （TYP)= 0.34Ω ID = 9A.
F630 Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.4Ω)
- Low Gate Charge(Typical Data:22nC)
- Low Reverse Transfer Capacitances(Typical:22pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
