F630 Overview
Key Specifications
Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.4Ω)
- Low Gate Charge(Typical Data:22nC)
- Low Reverse Transfer Capacitances(Typical:22pF)
- 100% Single Pulse Avalanche Energy Test
