F7N65 Overview
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 650V RDS(on) （TYP)= 1.2Ω ID = 7A.
F7N65 Key Features
- Fast Switching
- ESD Improved Capability
- Low ON Resistance(Rdson≤1.4Ω)
- Low Gate Charge(Typical Data:24nC)
- Low Reverse Transfer Capacitances(Typical:5.5pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
F7N65 Applications
- used in various power switching circuit for system miniaturization and higher efficiency