F7N65
Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
- Fast Switching
- ESD Improved Capability
- Low ON Resistance(Rdson≤1.4Ω)
- Low Gate Charge(Typical Data:24nC)
- Low Reverse Transfer Capacitances(Typical:5.5pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
Applications
- Power switch circuit of electron ballast and adaptor
