F8NE60 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 1.0Ω ID = 7.5A.
F8NE60 Key Features
- Fast Switching
- ESD Improved Capability
- Low ON Resistance(Rdson≤1.3Ω)
- Low Gate Charge(Typical Data:24nC)
- Low Reverse Transfer Capacitances(Typical:5.5pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
F8NE60 Applications
- Used in various power switching circuit for system miniaturization and higher efficiency