I25N10
Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤36mΩ)
- Low Gate Charge(Typical:61nC)
- Low Reverse Transfer Capacitances(Typical:84pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
