ROUM I5N60
5A 600V N-channel Enhancement Mode Power MOSFET
| Part No. | I5N60 |
|---|---|
| Datasheet | I5N60 Download |
| Manufacturer | ROUM |
| Description | 5A 600V N-channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 1.4Ω ID = 5A 2FEATURES
● Fast Switching● Low ON Resistance(Rdson≤1.7Ω)
● Low Gate Charge(Typical:19.5nC)
● Low Reverse Transfer Capacitances(Typical:7.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3
APPLICATIONS
● used in various power switching circuit for system miniaturization and higher efficiency.● Power switch circuit of electron ballast and adaptor. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4
ELECTRICAL CHARACTERISTICS
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 5N60/I5N60/E5N60 /B5N60/D5N60 Drian-Source Voltage VDS 600 Gate-Drain Voltage V
