I5N60 - 5A 600V N-channel Enhancement Mode Power MOSFET

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤1.7Ω).
Low Gate Charge(Typical:19.5nC).
Low Reverse Transfer Capacitances(Typical:7.5pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

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I5N60 5a 600v n-channel enhancement mode power mosfet by ROUM - Datasheet Preview

Datasheet Details

Part number	I5N60
Manufacturer	ROUM
File Size	1.41 MB
Description	5A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	I5N60 Datasheet

Full PDF Text Transcription for I5N60 (Reference)

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5N60/F5N60/I5N60/E5N60/B5N60/D5N60 5A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned plana...

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se N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 1.4Ω ID = 5A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤1.7Ω) ● Low Gate Charge(Typical:19.5nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor.

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