• Part: FM21L16
  • Description: 2Mbit FRAM Memory
  • Manufacturer: Ramtron International Corporation
  • Size: 265.05 KB
Download FM21L16 Datasheet PDF
Ramtron International Corporation
FM21L16
FM21L16 is 2Mbit FRAM Memory manufactured by Ramtron International Corporation.
Features 2Mbit Ferroelectric Nonvolatile RAM - Organized as 128Kx16 - Configurable as 256Kx8 Using /UB, /LB - 1014 Read/Write Cycles - No Delay™ Writes - Page Mode Operation to 40MHz - Advanced High-Reliability Ferroelectric Process SRAM patible - Industry Std. 128Kx16 SRAM Pinout - 60 ns Access Time, 110 ns Cycle Time Advanced Features - Low VDD Monitor Protects Memory against Inadvertent Writes - Software Programmable Block Write Protect Superior to Battery-backed SRAM Modules - No Battery Concerns - Monolithic Reliability - True Surface Mount Solution, No Rework Steps - Superior for Moisture, Shock, and Vibration Low Power Operation - 2.7V - 3.6V Power Supply - Low Current Mode (5µA) using ZZ pin - 18 m A Active Current Industry Standard Configuration - Industrial Temperature -40° C to +85° C - 44-pin “Green”/Ro HS TSOP-II package Description The FM21L16 is a 128Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or FRAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design plexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make FRAM superior to other types of memory. In-system operation of the FM21L16 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by /CE or simply by changing the address. The FRAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM21L16 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM. The FM21L16 includes a low voltage monitor that blocks access to the memory array when VDD drops below a critical threshold. The memory is protected against an inadvertent access and data corruption under this condition. The device also features...