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Preliminary
FM25e64
64Kb Serial Low Energy F-RAM Memory FEATURES
64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion (1012) Read/Writes 36 Year Data Retention at +75ºC NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Fast SPI Interface Up to 20 MHz Frequency SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Software Write-Protection (BP bits) Hardware Write-Protect (/WP pin) Active-Low RESET Input Holds Device in Reset State While Power Supply Stabilizes Reduces Time to First F-RAM Access Allows Freedom of Power Supply Ramp Rates Low Voltage/ Low Energy Consumption VDD = 1.8V ±0.1V (-1 version) VDD = 1.5V +0.15V, -0.1V (-2 version) 20 A (typ.) Active Current at 1 MHz 0.1 A (typ.