Ramtron FM1608B
The FM1608B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. It provides data retention for 38 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). In-system operation of the FM1608B is very similar to other RAM devices.| Part No. | FM1608B |
|---|---|
| Datasheet | FM1608B Download |
| Manufacturer |  Ramtron |
| Description | 64Kb Bytewide 5V F-RAM Memory |
| Buy | Stock & Price |
FEATURES
64Kbit Ferroelectric Nonvolatile RAM● Organized as 8,192 x 8 bits
● High Endurance 1 Trillion (1012) Read/Writes
● 38 year Data Retention (@ +75°C)
● NoDelay™ Writes
● Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules
● No Battery Concerns
● Monolithic Reliability
● True Surface Mount Solution, No Rework Steps
● Superior for Moisture, Shock, and Vibration
● Resistant to Negative Voltage Undershoots SRAM & EEPROM Compatible
● JEDEC 8Kx8 SRAM & EEPROM pinout
● 70 ns Access Time
● 130 ns Cycle Time Low Power Operation
● 15 mA Active Current
● 25 µA (typ.) Standby Current Industry Standard Configuration
● Industrial Temperature -40°C to +85°C
● 28-pin “Green”/RoHS SOIC Package
DESCRIPTION
A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. Fast write timing and high write endurance make F-RAM superior to other types of nonvolatile memory. Minimum read- and writecycle times are equal. The F-RAM memory, however, is nonvolatile due to its unique ferroelectric memory process.
