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FM18W08 - 256Kb Wide Voltage Bytewide F-RAM

General Description

The FM18W08 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM.

Key Features

  • 256Kbit Ferroelectric Nonvolatile RAM.
  • Organized as 32,768 x 8 bits.
  • High Endurance 100 Trillion (1014) Read/Writes.
  • 38 year Data Retention.
  • NoDelay™ Writes.
  • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules.
  • No Battery Concerns.
  • Monolithic Reliability.
  • True Surface Mount Solution, No Rework Steps.
  • Superior for Moisture, Shock, and Vibration.
  • Resistant to Negative Voltage Undershoots SRAM & EEPROM Compatible.
  • JEDEC 3.

📥 Download Datasheet

Datasheet Details

Part number FM18W08
Manufacturer Ramtron
File Size 491.12 KB
Description 256Kb Wide Voltage Bytewide F-RAM
Datasheet download datasheet FM18W08 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM  Organized as 32,768 x 8 bits  High Endurance 100 Trillion (1014) Read/Writes  38 year Data Retention  NoDelay™ Writes  Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules  No Battery Concerns  Monolithic Reliability  True Surface Mount Solution, No Rework Steps  Superior for Moisture, Shock, and Vibration  Resistant to Negative Voltage Undershoots SRAM & EEPROM Compatible  JEDEC 32Kx8 SRAM & EEPROM pinout  70 ns Access Time  130 ns Cycle Time Low Power Operation  Wide Voltage Operation 2.7V to 5.5V  12 mA Active Current  20 A (typ.