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FM24CL04B Datasheet PDF

Ramtron FM24CL04B

The FM24CL04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24CL04B performs write operations at bus speed.
Part No. FM24CL04B
Datasheet FM24CL04B Download
Manufacturer
Ramtron
Description 4Kb Serial 3V F-RAM Memory
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FM24CL04B datasheet page 1 preview

FEATURES

4K bit Ferroelectric Nonvolatile RAM
● Organized as 512 x 8 bits
● High Endurance 1014 Read/Writes
● 38 Year Data Retention
● NoDelay™ Writes
● Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface
● Up to 1 MHz maximum bus frequency
● Direct hardware replacement for EEPROM
● Supports legacy timing for 100 kHz & 400 kHz Low Power Operation
● 2.7V to 3.65V operation
● 100 µA Active Current (100 kHz)
● 3 µA (typ.) Standby Current Industry Standard Configuration
● Industrial Temperature -40° C to +85° C
● 8-pin “Green”/RoHS SOIC (-G)

DESCRIPTION

A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. The FM24CL04B is capable of supporting 1014 read/write cycles, or a million times more write cycles than EEPROM.
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