FM24CL16B Datasheet | Ramtron

.Data Sheet.co.kr Preliminary 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM - Organized as 2,048 x 8 bits - High Endurance 1014 Read/Writes - 38 year Data Retention - No Delay™ Writes - Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface - Up to 1MHz Maximum Bus Frequency - Direct Hardware Replacement for EEPROM - Supports legacy timing for 100 k Hz & 400 k Hz Low Power Operation - 2.7 - 3.65V Operation - 100 µA Active Current (100 k Hz) - 3 µA (typ.) Standby Current Industry Standard Configuration - Industrial Temperature -40° C to +85° C - 8-pin “Green”/Ro HS SOIC and TDFN Packages Description The FM24CL16B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the plexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24CL16B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may mence immediately without the need for data polling. The FM24CL16B is capable of supporting 1014 read/write cycles, or a million times more write cycles than EEPROM. These capabilities make the FM24CL16B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where a long write time can cause data loss. The bination of Features allows the system to write data more frequently, with less system overhead. The FM24CL16B provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24CL16B is available in an industry...