FM24CL64B Datasheet | Ramtron

.Data Sheet.co.kr Preliminary AEC Q100 Grade 1 pliant - Automotive Temp. 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM - Organized as 8192 x 8 bits - High Endurance 10 Trillion (1013) Read/Writes - No Delay™ Writes - Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface - Up to 1 MHz maximum bus frequency - Direct hardware replacement for EEPROM - Supports legacy timing for 100 k Hz & 400 k Hz Low Power Consumption - Low Voltage Operation 3.0-3.6V - 6 A Standby Current (+85C) Industry Standard Configuration - Automotive Temperature -40C to +125C o Qualified to AEC Q100 Specification - 8-pin “Green”/Ro HS SOIC Package Description The FM24CL64B is a 64Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for years while eliminating the plexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24CL64B performs write operations at bus speed. No write delays are incurred. The next bus cycle may mence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. These capabilities make the FM24CL64B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The bination of Features allows more frequent data writing with less overhead for the system. The FM24CL64B provides substantial benefits to users of serial EEPROM, yet these benefits are available in a...