FM24V01 Datasheet | Ramtron

.Data Sheet.co.kr Preliminary 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM - Organized as 16,384 x 8 bits - High Endurance 100 Trillion (1014) Read/Writes - 10 year Data Retention - No Delay™ Writes - Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface - Up to 3.4 MHz maximum bus frequency - Direct hardware replacement for EEPROM - Supports legacy timing for 100 k Hz & 400 k Hz Device ID - Device ID reads out Manufacturer ID & Part ID Low Voltage, Low Power Operation - Low Voltage Operation 2.0V - 3.6V - Active Current 90 A (typ. @ 100KHz) - Standby Current 80 A (typ.) - Sleep Mode Current 4 A (typ.) Industry Standard Configuration - Industrial Temperature -40 C to +85 C - 8-pin “Green”/Ro HS SOIC Package Description The FM24V01 is a 128Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the plexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24V01 performs write operations at bus speed. No write delays are incurred. The next bus cycle may mence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. These capabilities make the FM24V01 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The bination of Features allows more frequent data writing with less overhead for the system. The FM24V01 provides...