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FM24V01 Datasheet PDF

Ramtron FM24V01

The FM24V01 is a 128Kbit nonvolatile memory employing an advanced ferroelectric process. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24V01 performs write operations at bus speed.
Part No. FM24V01
Datasheet FM24V01 Download
Manufacturer
Ramtron
Description 3V F-RAM Memory
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FM24V01 datasheet page 1 preview

FEATURES

128K bit Ferroelectric Nonvolatile RAM
● Organized as 16,384 x 8 bits
● High Endurance 100 Trillion (1014) Read/Writes
● 10 year Data Retention
● NoDelay™ Writes
● Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface
● Up to 3.4 MHz maximum bus frequency
● Direct hardware replacement for EEPROM
● Supports legacy timing for 100 kHz & 400 kHz Device ID
● Device ID reads out Manufacturer ID & Part ID Low Voltage, Low Power Operation
● Low Voltage Operation 2.0V – 3.6V
● Active Current 90 A (typ. @ 100KHz)
● Standby Current 80 A (typ.)
● Sleep Mode Current 4 A (typ.) Industry Standard Configuration
● Industrial Temperature -40 C to +85 C
● 8-pin “Green”/RoHS SOIC Package

DESCRIPTION

A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM.
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