Ramtron FM25CL64B
The FM25CL64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25CL64B performs write operations at bus speed.| Part No. | FM25CL64B |
|---|---|
| Datasheet | FM25CL64B Download |
| Manufacturer |  Ramtron |
| Description | 3V F-RAM Memory |
| Buy | Stock & Price |
FEATURES
64K bit Ferroelectric Nonvolatile RAM● Organized as 8,192 x 8 bits
● High Endurance 100 Trillion (1014) Read/Writes
● 38 Year Data Retention (@ +75ºC)
● NoDelay™ Writes
● Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI
● Up to 20 MHz Frequency
● Direct Hardware Replacement for EEPROM
● SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme
● Hardware Protection
● Software Protection Low Power Consumption
● Low Voltage Operation 2.7-3.65V
● 200 µA Active Current (1 MHz)
● 3 µA (typ.) Standby Current Industry Standard Configuration
● Industrial Temperature -40°C to +85°C
● 8-pin “Green”/RoHS SOIC and TDFN Packages
DESCRIPTION
A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. No write delays are incurred. Data is written to the memory array immediately after each byte has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling.
