FM25H20 Datasheet | Ramtron

Pre-Production .. 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM - Organized as 256K x 8 bits - High Endurance 100 Trillion (1014) Read/Writes - 10 Year Data Retention - No Delay™ Writes - Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI - Up to 40 MHz Frequency - Direct Hardware Replacement for Serial Flash - SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme - Hardware Protection - Software Protection Low Power Consumption - Low Voltage Operation 2.7V - 3.6V - Sleep Mode Current 3 µA (typ.) Industry Standard Configurations - Industrial Temperature -40°C to +85°C - 8-pin “Green”/Ro HS TDFN Package - 8- pin “Green”/Ro HS EIAJ SOIC Package Description The FM25H20 is a 2-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the plexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories. Unlike Serial Flash, the FM25H20 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the device. The next bus cycle may mence without the need for data polling. The product offers virtually unlimited write endurance, orders of magnitude more endurance than Serial Flash. Also, F-RAM exhibits lower power consumption than Serial Flash. These capabilities make the FM25H20 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of Serial Flash can cause data loss. The FM25H20 provides substantial benefits to users of Serial Flash as a hardware drop-in...