FM25L04B Description
The FM25L04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the plexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
FM25L04B Key Features
- Organized as 512 x 8 bits
- High Endurance 100 Trillion (1014) Read/Writes
- 38 Year Data Retention (@ +75ºC)
- NoDelay™ Writes
- Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface
- Up to 20 MHz Frequency
- Direct Hardware Replacement for EEPROM
- Hardware Protection
- Software Protection Low Power Consumption
- Low Voltage Operation 2.7-3.6V