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FM25L04B - 3V F-RAM Memory

General Description

The FM25L04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM.

Key Features

  • 4K bit Ferroelectric Nonvolatile RAM.
  • Organized as 512 x 8 bits.
  • High Endurance 100 Trillion (1014) Read/Writes.
  • 38 Year Data Retention (@ +75ºC).
  • NoDelay™ Writes.
  • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI.
  • Up to 20 MHz Frequency.
  • Direct Hardware Replacement for EEPROM.
  • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme.
  • Hardware Protection.

📥 Download Datasheet

Datasheet Details

Part number FM25L04B
Manufacturer Ramtron
File Size 277.83 KB
Description 3V F-RAM Memory
Datasheet download datasheet FM25L04B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Preliminary FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 100 Trillion (1014) Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz Frequency • Direct Hardware Replacement for EEPROM • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme • Hardware Protection • Software Protection Low Power Consumption • Low Voltage Operation 2.7-3.6V • 200 µA Active Current (1 MHz) • 3 µA (typ.