Ramtron FM25L256B
The FM25L256B is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM25L256B performs write operations at bus speed.| Part No. | FM25L256B |
|---|---|
| Datasheet | FM25L256B Download |
| Manufacturer |  Ramtron |
| Description | 3V F-RAM Memory |
| Buy | Stock & Price |
FEATURES
256K bit Ferroelectric Nonvolatile RAM● Organized as 32,768 x 8 bits
● Unlimited Read/Write Cycles
● 45 Year Data Retention
● NoDelay™ Writes
● Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI
● Up to 20 MHz Frequency
● Direct Hardware Replacement for EEPROM
● SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme
● Hardware Protection
● Software Protection Low Power Consumption
● Low Voltage Operation 2.7V – 3.6V Industry Standard Configurations
● Industrial Temperature -40°C to +85°C
● 8-pin SOIC and 8-pin TDFN Packages
● “Green”/RoHS Packaging
DESCRIPTION
A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. No write delays are incurred. Data is written to the memory array immediately after each byte has been transferred to the device. The next bus cycle may commence without the need for data polling. In addition, the product offers virtually unlimited write endurance. FRAM also exhibits much lower power consumption than EEPROM.
