Ramtron FM25L512
The FM25L512 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM25L512 performs write operations at bus speed.| Part No. | FM25L512 |
|---|---|
| Datasheet | FM25L512 Download |
| Manufacturer |  Ramtron |
| Description | 3V F-RAM Memory |
| Buy | Stock & Price |
FEATURES
512K bit Ferroelectric Nonvolatile RAM● Organized as 65,536 x 8 bits
● Unlimited Read/Write Cycles
● 10 Year Data Retention
● NoDelay™ Writes
● Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI
● Up to 20 MHz Frequency
● Direct Hardware Replacement for EEPROM
● SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme
● Hardware Protection
● Software Protection Low Power Consumption
● Low Voltage Operation 3.0V – 3.6V
● 20 µA Standby Current Industry Standard Configurations
● Industrial Temperature -40°C to +85°C
● 8-pin “Green”/RoHS TDFN Package
● Footprint Compatible with SOIC-8 (see pg 12)
DESCRIPTION
A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. The next bus cycle may start immediately. In addition, the product offers virtually unlimited write endurance. Also, FRAM exhibits much lower power consumption than EEPROM.
