FM25W256 Datasheet | Ramtron

.Data Sheet.co.kr Preliminary 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM - Organized as 32,768 x 8 bits - High Endurance 100 Trillion (1014) Read/Writes - 38 Year Data Retention (@ +75ºC) - No Delay™ Writes - Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI - Up to 20 MHz Frequency - Direct Hardware Replacement for EEPROM - SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme - Hardware Protection - Software Protection Low Power Operation - Wide Voltage Operation 2.7V - 5.5V - 15 µA (typ.) Standby Current Industry Standard Configurations - Industrial Temperature -40°C to +85°C - 8-pin “Green”/Ro HS SOIC (-G) Description The FM25W256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the plexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25W256 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been successfully transferred to the device. The next bus cycle may mence immediately without the need for data polling. In addition, the product offers substantial write endurance pared with other nonvolatile memories. The FM25W256 is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM25W256 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25W256 provides substantial benefits to users of serial EEPROM as a hardware drop-in...