Datasheet4U Logo Datasheet4U.com

WM71004 - (WM71004 - WM71016) 4/8/16Kbit Secure F-RAM Memory

Datasheet Summary

Description

The WM710xx is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory, or F-RAM, is nonvolatile and performs reads and writes like a RAM.

Features

  • 4/8/16 Kbit Ferroelectric Nonvolatile RAM.
  • Organized as 256/512/1024 x 16 bits.
  • Very High Read/Write Endurance (> 1014).
  • 20-Year Data Retention.
  • Gamma Stability Demonstrated to > 30 kGy.
  • Symmetric Read/Write Operation.
  • Advanced High-Reliability Ferroelectric Process Interface and Security Features.
  • EPC Class 1 Gen2 (ISO18000-6C) RFID Compatible Interface (revision 1.2.0).
  • 192-Bit Memory: 96-Bit Electronic Product Code™ (EPC), 32-Bit Access Password, 32-Bit.

📥 Download Datasheet

Datasheet preview – WM71004

Datasheet Details

Part number WM71004
Manufacturer Ramtron
File Size 463.18 KB
Description (WM71004 - WM71016) 4/8/16Kbit Secure F-RAM Memory
Datasheet download datasheet WM71004 Datasheet
Additional preview pages of the WM71004 datasheet.

📁 Similar Datasheet

  • WM7121PE - Top Port Analog Silicon Microphone (Cirrus Logic)
  • WM7132PE - Bottom Port Analog Silicon Microphone (Cirrus Logic)
  • WM7211E - Top Port Digital Silicon Microphone (Cirrus Logic)
  • WM7216E - Low Power Top Port Digital Silicon Microphone (Cirrus Logic)
  • WM7230E - Bottom Port Digital Silicon Microphone (Cirrus Logic)
  • WM7236E - Low Power Bottom Port Digital Silicon Microphone (Cirrus Logic)
  • WM7331E - Bottom Port Analog Silicon Microphone (Cirrus Logic)
Other Datasheets by Ramtron
  • WM71008 - (WM71004 - WM71016) 4/8/16Kbit Secure F-RAM Memory
  • WM71016 - (WM71004 - WM71016) 4/8/16Kbit Secure F-RAM Memory
  • WM72016 - 16Kbit Secure F-RAM Memory

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr Preliminary WM71004 / WM71008 / WM71016 4/8/16Kbit Secure F-RAM Memory with Gen-2 RFID Access DESCRIPTION The WM710xx is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 20 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM‟s, the WM710xx write operations are zero power – there is no power or speed premium paid for executing writes into the WM710xx as compared to read power and speed. Operation of the memory is fully symmetric: it has an equivalent read and write range.
Published: |