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RS60N50D - N-Channel MOSFET

Features

  • VDS=60V; ID=50A RDS(ON) < 20mΩ @ VGS =10V Rds(on) < 25mΩ @ VGS =4.5V.
  • Ultra Low On-Resistance.
  • High UIS and UIS 100% Test.
  • RoHS Compliant RS60N50D Lead Free Package and Finish ID RDS(ON)(Max. ) VDSS 50A 20mΩ 60V Ordering Information Part Number Package RS60N50D TO-252 Marking RS60N50D Absolute Maximun Ratings Tc=25℃ unless otherwise specified Symbol VDSS ID IDM PD VGS EAS TL TPKG TJ and TSTG Parameter Drain-to-Source Voltage Continuous Drain Current.

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Datasheet Details

Part number RS60N50D
Manufacturer Reasunos
File Size 558.07 KB
Description N-Channel MOSFET
Datasheet download datasheet RS60N50D Datasheet

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Full PDF Text Transcription

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N Channel MOSFET Applications: •PWM applications •Load switch •Power management Features: •VDS=60V; ID=50A RDS(ON) < 20mΩ @ VGS =10V Rds(on) < 25mΩ @ VGS =4.5V •Ultra Low On-Resistance •High UIS and UIS 100% Test •RoHS Compliant RS60N50D Lead Free Package and Finish ID RDS(ON)(Max.) VDSS 50A 20mΩ 60V Ordering Information Part Number Package RS60N50D TO-252 Marking RS60N50D Absolute Maximun Ratings Tc=25℃ unless otherwise specified Symbol VDSS ID IDM PD VGS EAS TL TPKG TJ and TSTG Parameter Drain-to-Source Voltage Continuous Drain Current（Tc=25℃） Continuous Drain Current Tc=100℃ Pulsed Drain Current (Note*1) Power Dissipation（Tc=25℃） Gate-to-Source Voltage Single Pulse Avalanche Engergy (Note*2) Maximum Temperature for Soldering Leads at 0.063in(1.
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