Datasheet4U Logo Datasheet4U.com

RS8N65F - N-Channel MOSFET

Features

  • Fast switching speed.
  • 100% avalanche tested.
  • Improved dv/dt capability Ordering Information Part Number Package RS8N65F T0-220F Marking RS8N65F RS8N65F N Channel MOSFET Packing Tube Qty. 50 PCS Absolute Maximun Ratings Tc= 2 5℃ unless otherwise specified Symbol Parameter RS8N65F Units VDSS Drain-to-Source Voltage 650 V ID Continuous Drain Current TC=25℃ IDM Pulsed Drain Current (Note.
  • 1) 8 A 32 PD Power Dissipation 35 W VGS EAS TL TPKG.

📥 Download Datasheet

Datasheet Details

Part number RS8N65F
Manufacturer Reasunos
File Size 708.28 KB
Description N-Channel MOSFET
Datasheet download datasheet RS8N65F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RS8 SINGLE-PHASE SILICON BRIDGE CHENG-YI ELECTRONIC
RS800480T-7X0GP-A LCD Module OKAYA
RS800480T-7x0WP-A LCD Module OKAYA
RS8005 SINGLE-PHASE SILICON BRIDGE CHENG-YI ELECTRONIC
RS801 SINGLE-PHASE BRIDGE RECTIFIER MOSPEC

Other Datasheets by Reasunos

Part Number Description
RS85N150S N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
ID RDS(ON)(Typ ) VDSS 8A 0.95Ω 650V Applications: • Switch Mode Power Supply(SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability Ordering Information Part Number Package RS8N65F T0-220F Marking RS8N65F RS8N65F N Channel MOSFET Packing Tube Qty. 50 PCS Absolute Maximun Ratings Tc= 2 5℃ unless otherwise specified Symbol Parameter RS8N65F Units VDSS Drain-to-Source Voltage 650 V ID Continuous Drain Current TC=25℃ IDM Pulsed Drain Current (Note*1) 8 A 32 PD Power Dissipation 35 W VGS EAS TL TPKG Gate- to- Source Voltage Single Pulse Avalanche Engergy L = 10mH, VDD = 50V, RG = 25 Ω Maximum Temperature for Soldering Leads at 0.063in(1.
Published: |