12N650
Description
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
ƽ New technology for high voltage device ƽ Low on-resistance and low conduction losses ƽ Small package ƽ Ultra Low Gate Charge cause ƽ 100% Avalanche Tested ƽ ROHS pliant
Application
ƽ Power factor correction˄PFC˅ ƽ Switched mode power supplies(SMPS)
ƽ Uninterruptible Power Supply˄UPS˅
VDS RDS(ON)TYP ,'
290 mΩ
$
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Package Marking And Ordering Information
Device
Device Package
Marking
RM12N650LD
TO-252
RM12N650IP
TO-251
Table 1. Absolute Maximum Ratings (TC=25ć
Parameter
Symbol
Drain-Source Voltage (VGS=0V˅
Gate-Source Voltage (VDS=0V) AC (f>1 Hz)
Continuous Drain Current at TC =25°C
Continuous Drain...
