Rectron Semiconductor 1SS181
SWITCHING DIODE
FEATURES
* Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OCMECHANICAL DATA
* Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gramMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.ELECTRICAL CHARACTERISTICS
( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL Reverse Breakdown Voltage (IR=100µA) Reverse voltage leakage current (VR=80V) V(BR) IR Forward voltage (IF=100mA) VF Diode capacitance (VR=0V,f=1MHz) CD Reverse recovery time trr SOT-23 0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) 1 0.019(2.00) 0.071(1.80) 0.118(3.00) 3 0.110(2.80) 2 Dimensions in inches and (millimeters) MIN.